Conference paper
An on-chip dual supply charge pump system for 45nm PD SOI eDRAM
J.B. Kuang, A. Mathews, et al.
ESSCIRC 2008
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
J.B. Kuang, A. Mathews, et al.
ESSCIRC 2008
J. Schaub, S.M. Csutak, et al.
LEOS 2002
J.A. Kash, F.E. Doany, et al.
LEOS 2005
P. Pepeljugoski, J. Schaub, et al.
OFC 2002