Conference paper
High-speed germanium-on-insulator photodetectors
G. Dehlinger, J. Schaub, et al.
LEOS 2005
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
G. Dehlinger, J. Schaub, et al.
LEOS 2005
S.M. Csutak, J. Schaub, et al.
IEEE Photonics Technology Letters
J.B. Kuang, A. Mathews, et al.
ESSCIRC 2008
B. Yang, J. Schaub, et al.
LEOS 2002