Revanth Kodoru, Atanu Saha, et al.
arXiv
Paper
1/f noise and percolation in impurity bands in inversion layers
Abstract
Current noise measurements on Si inversion layers in the region of the Na impurity band at 4.2K are presented. The measurements show that the observed 1/f noise is an intrinsic property of the hopping conduction and is not due to charge trapping as usually assumed. Na-related structure in the noise magnitude suggests that percolation effects can be important to hopping conduction.
Related
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films