Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Ab initio total-energy calculations were used to examine (2×2) reconstruction models for the (111) and (1̄1̄1̄) surfaces of GaAs. For the (111) surface the lowest-energy Ga-vacancy geometry is determined; several mechanisms for Ga-vacancy formation are examined and other reconstructions are discussed. For the (1̄1̄1̄) surface it is shown that the As-vacancy model is unlikely and other geometries are considered. © 1986 The American Physical Society.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
R. Ghez, J.S. Lew
Journal of Crystal Growth