E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
We employ the Monte Carlo simulation method of classical statistical mechanics to study the structure and energetics of the crystal/amorphous interface. The interface is found to be approximately four atomic layers thick and provides good bonding between the amorphous and crystalline phases. © 1978.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
John G. Long, Peter C. Searson, et al.
JES
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
P. Alnot, D.J. Auerbach, et al.
Surface Science