Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Paper
A finite number of sub-bands?
Abstract
It is shown that the condition for the number of electron sub-band levels from quantization in an accumulation or inversion layer to be finite is that ∫∞V1/2 dz converges, where V(z) is the potential as a function of depth z. It appears that this condition should normally be satisfied.
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