Hironori Takeuchi, Tetsuya Nasukawa, et al.
Transactions of the Japanese Society for Artificial Intelligence
We propose a new neural network structure that is compatible with silicon technology. This network has the feature that the learning parameter is embodied in the thresholds of MOSFET devices and is local in character. The network is shown to be capable of forming associations by example as well as exhibiting the desirable features of the Hopfield type networks. © 1989.
Hironori Takeuchi, Tetsuya Nasukawa, et al.
Transactions of the Japanese Society for Artificial Intelligence
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ICASSP 2025
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