Hans Becker, Frank Schmidt, et al.
Photomask and Next-Generation Lithography Mask Technology 2004
The running solutions and I-V characteristic of an extended Josephson junction in a state near the ohmic regime are calculated by a perturbation method. Both the voltage-driven and current-driven cases are considered and the convergence of the perturbation procedure is proved. An integral representation of the first correction, in the I-V curve, to the ohmic regime-as well as its dependence on the external magnetic field-is given and evaluated numerically for various values of the junction parameters. © 1979.
Hans Becker, Frank Schmidt, et al.
Photomask and Next-Generation Lithography Mask Technology 2004
Timothy J. Wiltshire, Joseph P. Kirk, et al.
SPIE Advanced Lithography 1998
Kenneth L. Clarkson, K. Georg Hampel, et al.
VTC Spring 2007
Guillaume Buthmann, Tomoya Sakai, et al.
ICASSP 2025