J.Z. Sun, W.J. Gallagher, et al.
Physical Review B
A three-terminal spin-torque-driven magnetic switch is experimentally demonstrated. The device uses nonlocal spin current and spin accumulation as the main mechanism for current-driven magnetic switching. It separates the current-induced write operation from that of a magnetic tunnel junction based read. The write current only passes through metallic structures, improving device reliability. The device structure makes efficient use of lithography capabilities, important for robust process integration. © 2009 American Institute of Physics.
J.Z. Sun, W.J. Gallagher, et al.
Physical Review B
E.J.M. O'Sullivan
ECS Meeting 2004
J.Z. Sun, L. Krusin-Elbaum, et al.
Applied Physics Letters
J.Z. Sun, P.L. Trouilloud, et al.
Journal of Applied Physics