J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs-GaAs(110) system becomes a Mott insulator at submonolayer Cs coverages. We also provide a consistent interpretation of electron-energy-loss and scanning-tunneling-spectroscopies data. The correlation effects are important for this system with an estimated correlation energy of 0.4 eV. © 1993 The American Physical Society.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
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Advanced Materials
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