Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs-GaAs(110) system becomes a Mott insulator at submonolayer Cs coverages. We also provide a consistent interpretation of electron-energy-loss and scanning-tunneling-spectroscopies data. The correlation effects are important for this system with an estimated correlation energy of 0.4 eV. © 1993 The American Physical Society.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
T. Schneider, E. Stoll
Physical Review B