Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We present a new calculation of the absorption due to transitions of holes between neutral acceptors and the various valence-band sublevels in GaAs and GaP. The acceptor wave function was approximated by a previously suggested expression for ground-state wave functions appropriate to complicated band extrema. Numerical calculations of the absorption from intervalence-band transitions of free holes and neutral acceptors have been performed. Good agreement with experimental results is obtained. © 1973 The American Physical Society.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
David B. Mitzi
Journal of Materials Chemistry
Imran Nasim, Melanie Weber
SCML 2024
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering