Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have investigated the adsorption and reaction of PH3 on Si(111)-(7×7) between 100 and 900 K. The topology, electronic structure, and chemical reactivity of the resulting P-doped surface was studied by ultraviolet photoemission spectroscopy, low-energy electron diffraction, and ion-scattering spectroscopy. The P-doped surface has a P(111)-(1×1) structure where P substitutes for the first Si-layer atoms of the Si(111) surface. This surface has no dangling bonds and is chemically inert. © 1991 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics