E. Spiller, I. Hailer, et al.
Applied Optics
A novel diffusion "marker" has been used in the backscattering study of the formation of Mo and W silicide films. Because of their closely similar crystallographic and chemical characteristics, Mo and W may be regarded as equivalent atoms in a diffusion process. Hence, in the formation of WSi 2 and MoSi2 by interaction of a bilayer film of W+Mo with substrate Si, the interface between the W and Mo (observable by backscattering) becomes a "marker" to permit identification of the moving species (Si at T<1000°C).
E. Spiller, I. Hailer, et al.
Applied Optics
O. Thomas, A. Charai, et al.
Thin Solid Films
J. Angilello, J.E.E. Baglin, et al.
Journal of Electronic Materials
F.M. D'Heurle
Journal de physique. Colloque