J.E.E. Baglin, F.M. D'Heurle, et al.
Journal of Applied Physics
A novel diffusion "marker" has been used in the backscattering study of the formation of Mo and W silicide films. Because of their closely similar crystallographic and chemical characteristics, Mo and W may be regarded as equivalent atoms in a diffusion process. Hence, in the formation of WSi 2 and MoSi2 by interaction of a bilayer film of W+Mo with substrate Si, the interface between the W and Mo (observable by backscattering) becomes a "marker" to permit identification of the moving species (Si at T<1000°C).
J.E.E. Baglin, F.M. D'Heurle, et al.
Journal of Applied Physics
A. Gangulee, F.M. D'Heurle
Thin Solid Films
J.E.E. Baglin, J. Dempsey, et al.
Journal of Electronic Materials
P. Gas, C. Bergman, et al.
Applied Physics Letters