F. Mehran, R.S. Title, et al.
Solid State Communications
Paper
An epr study of the effect of substrate orientation on vapor-grown GaP
Abstract
The results of EPR and resistivity measurements on vapor-grown GaP are discussed. The study shows that the appearance of Fe3+ EPR signals and the resistivity values are dependent on substrate orientation. A model based on the formation of Ga vacancies during growth is proposed to account for the observations. © 1967 The American Institute of Physics.
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