A. Deutsch, G.V. Kopcsay, et al.
ECTC 1997
Paper
An Investigation of the Potential of MOS Transistor Memories
Abstract
The design and performance characteristics of a 128X64 MOS transistor memory is given. The storage cell used operates with a low standby power, 0.1 mW. The memory operates with a 12-ns access time, 35-ns read cycle time, and a 60-ns write cycle time. Copyright © 1966 by The Institute of Electrical and Electronics Engineers, Inc.
Related
Paper
FET Memory Systems
L.M. Terman
IEEE Transactions on Magnetics
Conference paper
Limits - some are more fundamental than others
L.M. Terman
ICSICT 1995
A. Deutsch, H. Smith, et al.
IEEE Topical Meeting EPEPS 1997