D.D. Nolte, M.R. Melloch, et al.
Applied Physics Letters
Paper
An isothermal etchback-regrowth method for high-efficiency Ga 1-xAlxAs-GaAs solar cells
Abstract
High-efficiency p-Ga1-xAlxAs, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
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