M.H. Pilkuhn, H. Rupprecht, et al.
Proceedings of the IEEE
Paper
An isothermal etchback-regrowth method for high-efficiency Ga1-xAlxAsGaAs solar cells
Abstract
High-efficiency pGa1-xAlxAs, nGaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped GaAlAs melt. This one-step growth procedure produces a graded band gap pGa1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured. © 1990.
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