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Secondary grain growth in vapor-deposited Al-Cu thin films has been investigated as a function of temperature, Cu concentration and distribution. Second phase Al2Cu particles were found to have a considerable effect in retarding secondary growth. Nuclei for secondary growth formed, presumably by rearrangement of misfit dislocations, only when Cu was introduced as a layer sandwiched between two equal Al layers. © 1972.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
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SPIE Advanced Lithography 2007
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ADMETA 2011
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Technical Digest-International Electron Devices Meeting