Arsenic Source and Drain Implant Induced Degradation of Short-Channel Effects in NMOSFETs

Boron is found to segregate readily from the channel region into the arsenic implanted source / drain regions during the As activation anneal. The resulting boron depletion around the source and drain locally lowers the surface potential required for inversion and contributes substantially to the Vrolloff and drain-induced barrier lowering (DIBL) in subquarter-micrometer NMOSFET's. This boron redistribution originates from the As implantation damage in the source and drain regions. © 1993 IEEE