Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The miniaturization of integrated circuit devices requires complex multilevel structures for the fabrication oftheir electrical contacts. Aluminum is the standard metal used in silicon device technology for low resistance interconnections. However, the low temperature reaction of aluminum with silicon makes aluminium contacts incompatible with shallow junction device processing. Therefore, a barrier layer is needed between the two. The basic function of the barrier layer is to prevent aluminum-silicon intermixing by reducing the mass transport. The realization of this property is discussed from a materials point of view. Various barrier materials are surveyed and compared to the requirements for microelectronics device applications. © 1984, American Vacuum Society. All rights reserved.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989