William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
The behavior of chromium-vanadium layers deposited in that order on silicon substrates has been studied, as a function of heat treatment, with the aim of determining the difference of mobilities between the silicon and the metal atoms in the two respective disilicides. The motion of the silicon atoms requires temperatures of the order of 500°C, that of the metal atoms temperatures about 300°C higher. The two disilicides, previously reported to be totally soluble at 1500°C, appear to remain totally soluble at least down to 900°C. © 1989.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
E. Burstein
Ferroelectrics
K.A. Chao
Physical Review B
Frank Stem
C R C Critical Reviews in Solid State Sciences