Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
A LEED (low-energy electron diffraction) intensity analysis of C {111} 1 × 1 (diamond) has given good agreement with a surface structure which has bulk positions with small relaxation of the first interlayer spacing for both insulating and semiconducting specimens. The truncated-bulk character of C{111} 1 × 1 gives support to the previously determined bulk-like structure of stabilized Si{111} 1 × 1, and casts doubt on the disordered 7 × 7 structure suggested for the stabilized 1 × 1 phase by interpretation of photoemission measurements. In both cases rather than doubt the LEED structure, one can doubt the interpretation of the photoemission measurements. © 1982.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
J.A. Barker, D. Henderson, et al.
Molecular Physics
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001