S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
A LEED (low-energy electron diffraction) intensity analysis of C {111} 1 × 1 (diamond) has given good agreement with a surface structure which has bulk positions with small relaxation of the first interlayer spacing for both insulating and semiconducting specimens. The truncated-bulk character of C{111} 1 × 1 gives support to the previously determined bulk-like structure of stabilized Si{111} 1 × 1, and casts doubt on the disordered 7 × 7 structure suggested for the stabilized 1 × 1 phase by interpretation of photoemission measurements. In both cases rather than doubt the LEED structure, one can doubt the interpretation of the photoemission measurements. © 1982.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta