W. Krakow, J.T. Wetzel, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Paper
Characterization of epitaxial (Ca,Ba)F2 films on Si(111) substrates
Abstract
We have investigated epitaxial BaF2/CaF2 bilayers on Si(111) with ion channeling, grazing-incidence x-ray diffraction, and transmission electron microscopy. The BaF2 layer, which was grown on a thin intermediate CaF2 layer, showed a channeling minimum yield of 8% and a residual strain of 0.2%. Regions of BaF2 with a mosaic spread in orientation were observed but otherwise the epitaxial quality of the fluoride bilayer was found to be very good.
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