Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
We study charge control in a gated 4,4′-biphenyl diradical molecular transistor using ab initio density functional theory calculations. I-V curves and intrinsic gate capacitances were derived. We find charge control in this transistor to be strongly affected by polarization of the σ-states of the molecule, leading to strong electrostatic coupling of the internal potentials to the source and drain electrodes, and relatively weak coupling to the gate. We suggest that this spatially dependent and anisotropic polarization is an essential element in the operation of molecular transistors. © 2005 American Chemical Society.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Eloisa Bentivegna
Big Data 2022
Mark W. Dowley
Solid State Communications