Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications