C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.A. Barker, D. Henderson, et al.
Molecular Physics
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters