D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
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Physica A: Statistical Mechanics and its Applications
J.H. Stathis, R. Bolam, et al.
INFOS 2005