H.D. Dulman, R.H. Pantell, et al.
Physical Review B
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Julien Autebert, Aditya Kashyap, et al.
Langmuir