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A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Solomon Assefa, Steven Shank, et al.
IEDM 2012
Solomon Assefa, William M. J. Green, et al.
OFC 2011
Hugen Yan, Tony Low, et al.
Nature Photonics
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