Douglas M. Gill, Jonathan E. Proesel, et al.
IEEE JSTQE
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Douglas M. Gill, Jonathan E. Proesel, et al.
IEEE JSTQE
Huapu Pan, Solomon Assefa, et al.
Optics Express
Hugen Yan, Fengnian Xia, et al.
ACS Nano
Solomon Assefa, William M. J. Green, et al.
BCTM 2011