Solomon Assefa, Fengnian Xia, et al.
IEEE Journal on Selected Topics in Quantum Electronics
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Solomon Assefa, Fengnian Xia, et al.
IEEE Journal on Selected Topics in Quantum Electronics
Fengnian Xia, Lidija Sekaric, et al.
Applied Physics Letters
Hugen Yan, Xuesong Li, et al.
Nature Nanotechnology
Michael L. Cooper, Greeshma Gupta, et al.
CLEO 2011