Dechao Guo, G. Karve, et al.
VLSI Technology 2016
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Dechao Guo, G. Karve, et al.
VLSI Technology 2016
Jun Rong Ong, Michael L. Cooper, et al.
Optics Letters
Solomon Assefa, Fengnian Xia, et al.
OECC 2009
Ning Li, Kevin Han, et al.
Advanced Materials