Mackenzie A. Van Camp, Solomon Assefa, et al.
Optics Express
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Mackenzie A. Van Camp, Solomon Assefa, et al.
Optics Express
Wenjuan Zhu, Tony Low, et al.
Nature Communications
W.D. Sacher, William Green, et al.
Optics Express
William M. J. Green, Solomon Assefa, et al.
IPRSN 2011