Comment on "electron mobility in modulation-doped heterostructures"

The acoustic-mode-scattering mobility, as a component of the low-temperature Ohmic mobility, for electrons in a high-mobility GaAs single-interface heterolayer, is discussed. The numerical results in some recent publications, theoretical and experimental, are critically compared. The usefulness of the empirical values obtained from the linear relation between the reciprocal of the mobility and the temperature is pointed out. The calculation of the optical-mode-scattering component is briefly discussed. © 1985 The American Physical Society.