R. Ghez, J.S. Lew
Journal of Crystal Growth
Paper
Comment on “The diffusion of antimony in heavily doped and (sic) n- and p-type silicon” [J. Mater. Res. 1, 705 (1986)]
Abstract
No abstract available.
Related
E. Burstein
Ferroelectrics
Mark W. Dowley
Solid State Communications
John G. Long, Peter C. Searson, et al.
JES