Conference paperMaterials and process integration issues in metal gate/high-k stacks and their dependence on device performanceA.C. Callegari, K. Babich, et al.ECS Meeting 2007
PaperExamination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layersS. Guha, V.K. Paruchuri, et al.Applied Physics Letters