Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The electron deficiency (hole concentration) in the La2-xSrxCuO4- system is determined by a chemical method. Our results show a direct correlation between Tc and hole concentration. The hole concentration equals the Sr concentration to about x=0.15. For x>0.15, the hole concentration decreases and oxygen vacancies are formed. These results strongly support an all-electronic mechanism for superconductivity in this system. © 1987 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
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EMC 2001
Mark W. Dowley
Solid State Communications