D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
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