Crystallization of seeded amorphous Co(Si_1-x Ge_x)₂ thin films

The crystallization of ternary amorphous alloy thin films of Co(Si1-x Gex)2 with x ∼- 0.1 upon annealing to 300°C has been studied by in-situ resistivity measurement, X-ray diffraction and transmission electron microscopy combined with energy dispersive analysis. In the as-deposited state, the amorphous films are mixed with nanometer size crystals of Co(Si1-x Gex)2, which lowers the crystallization temperature as compared to that of amorphous CoSi2 alloys. A two-stage crystallization behavior of the ternary amorphous alloy has been observed. © 1992.