A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Disorder in amorphous semiconductors results in unusual properties of dc conductivity. We demonstrate a quantitative description of the temperature dependence of conductivity in a-Si. The universal activation energy dependence of the conductivity prefactor (the Meyer-Neldel rule) is reproduced. Excellent agreement with experimental results is obtained by describing disorder and defects using the general thermodynamic ensemble theory for the structure of disordered systems. © 1988 The American Physical Society.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
P. Alnot, D.J. Auerbach, et al.
Surface Science
Robert W. Keyes
Physical Review B