A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Paper
De Haas-Van Alphen effect in silicon inversion layers
Abstract
The dHvA effect was observed in a Si inversion layer by a modulation technique for constant magnetic field up to 15 T. The expected periodic spikes in dM dn between Landau levels were discerned. However, the predicted quantum plateaus with step of h {combining short stroke overlay}e m*c are not yet observed. © 1984.
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