Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Paper
De Haas-Van Alphen effect in silicon inversion layers
Abstract
The dHvA effect was observed in a Si inversion layer by a modulation technique for constant magnetic field up to 15 T. The expected periodic spikes in dM dn between Landau levels were discerned. However, the predicted quantum plateaus with step of h {combining short stroke overlay}e m*c are not yet observed. © 1984.
Related
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT