F.-J. Meyer Zu Heringdorf, D. Kähler, et al.
Surface Review and Letters
Paper
Decomposition of interfacial SiO2 during HfO2 deposition
Abstract
The removal of interfacial silicon dioxide due to the growth of HfO 2 by Hf deposition in an oxidizing ambient was investigated. The involvement of oxygen transport through HfO2 layer was shown by medium-energy ion scattering results. Oxygen vacancy reactions were held responsible for the temperature dependence of silica reduction.
Related
N.A. Bojarczuk, M. Copel, et al.
Applied Physics Letters
R.D. Clark, S. Consiglio, et al.
ECS Meeting 2008
J. Appenzeller, J. Knoch, et al.
IEDM 2006