M. Hargrove, S.W. Crowder, et al.
IEDM 1998
The use of a dedicated chamber to perform pre-epi deposition cleaning allows native oxide removal with a low thermal budget, and significantly improves throughput of low-temperature Si and SiGe applications. Wafers processed in the cleaning chamber show no detectable contaminants, and the cleansed surface is actually significantly smoother because of cleaning down to a sub-angstrom level.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
A. Krol, C.J. Sher, et al.
Surface Science
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999