S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
The use of a dedicated chamber to perform pre-epi deposition cleaning allows native oxide removal with a low thermal budget, and significantly improves throughput of low-temperature Si and SiGe applications. Wafers processed in the cleaning chamber show no detectable contaminants, and the cleansed surface is actually significantly smoother because of cleaning down to a sub-angstrom level.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters