Characterization of line width variation
Alfred K. Wong, Antoinette F. Molless, et al.
SPIE Advanced Lithography 2000
When the dielectric constant of an insulator in an interconnect is reduced, mechanical properties are often compromised, giving rise to significant challenges in interconnect integration and reliability. Due to low adhesion of the dielectric an interfacial crack may occur during fabrication and testing. To understand the effect of interconnect structure, an interfacial fracture mechanics model has been analyzed for patterned films undergoing a typical thermal excursion during the integration process. It is found that the underlayer pattern generates a driving force for delamination and changes the mode mixity of the delamination. The implications of our findings to interconnect processes and reliability testing have been discussed. © 2006 Elsevier Ltd. All rights reserved.
Alfred K. Wong, Antoinette F. Molless, et al.
SPIE Advanced Lithography 2000
M. Tismenetsky
International Journal of Computer Mathematics
Shu Tezuka
WSC 1991
Michael E. Henderson
International Journal of Bifurcation and Chaos in Applied Sciences and Engineering