Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Racetrack memory is a novel storage-class memory device in which a series of domain walls (DWs), representing zeros and ones, are shifted to and fro by current pulses along magnetic nanowires. Here we show, by precise measurements of the DW's position using spin-valve nanowires, that these positions take up discrete values. This results from DW relaxation after the end of the current pulse into local energy minima, likely derived from imperfections in the nanowire. © 2011 American Chemical Society.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989