Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Experimental and theoretical results are presented on the determination of distortion induced during the process of fabrication of X-ray lithography masks. The studies were performed on B-doped Si and on B-N-H mask substrates. © 1985.
T.N. Morgan
Semiconductor Science and Technology
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Michiel Sprik
Journal of Physics Condensed Matter