A. Gangulee, F.M. D'Heurle
Thin Solid Films
Transitions from the ground states of Si, Te, and S donors associated with the lowest X conduction band have been observed to excited donor states associated with the next-higher X conduction band as well as transitions into the higher band. The X3c-X1c interband energy is found to be 355 ± 3 meV with the conductivity effective mass in the higher band being (0.14±0.02)m0. © 1971 The American Physical Society.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000