A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The scanning tunneling microscope (STM) is used to study the disordering of the Ge(111)c(2 × 8) surface, at temperatures in the range 150-350°C. The disorder occurs by the diffusion of surface adatoms in the 〈011〉 directions. Disordered regions form at domain boundaries of the c(2 × 8) structure, and grow in size continuously with temperature until the entire surface becomes disordered at about 300°C. This order-disorder transition is identified as an example of premelting in two dimensions, i.e., edge melting. Analysis of relatively large STM images is used to obtain statistics for this continuous phase transition. © 1993.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Peter Wendt
Electronic Imaging: Advanced Devices and Systems 1990
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Hannaneh Hajishirzi, Julia Hockenmaier, et al.
UAI 2011