William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Self-diffusion measurements have been made in polycrystalline Au-1.2 at.% Ta alloy over the temperature range 204°-395.5 °C using 195Au radioactive tracer and r.f. backsputtering techniques for serial sectioning. Self-diffusion coefficients were obtained in the lattice, dislocation networks (subgrains) and large angle grain boundaries and these yielded Arrhenius parameters for the three diffusion processes. A small addition of Ta to Au was found to have profound effects on Au diffusion in the lattice and along grain boundaries. © 1975.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
R.W. Gammon, E. Courtens, et al.
Physical Review B