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FinFET performance advantage at 22nm: An AC perspective
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Paper
Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz
Abstract
The effect of collector lateral scaling on the performance of 300GHz-level SiGe HBTs is investigated. Peak fT and fmax exhibited an initial improvement followed by a degradation with decreasing collector width. Possible causes behind the observed trend are discussed in terms of RC delay and the Kirk effect. © The Institution of Engineering and Technology 2006.
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