R.D. Goldblatt, B.N. Agarwala, et al.
IITC 2000
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
R.D. Goldblatt, B.N. Agarwala, et al.
IITC 2000
J.C. Hay, E. Liniger, et al.
MRS Online Proceedings Library
C.-K. Hu, M.B. Small, et al.
MRS Proceedings 1993
S.V. Nitta, S. Ponoth, et al.
ADMETA 2007