D. Gupta, C.-K. Hu, et al.
Defect and Diffusion Forum
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
D. Gupta, C.-K. Hu, et al.
Defect and Diffusion Forum
C.-K. Hu, D. Canaperi, et al.
AMC 2003
J.C. Hay, E. Liniger, et al.
MRS Online Proceedings Library
C.-K. Hu, L. Gignac, et al.
IITC 2002