Conference paper
Electromigration reliability of advanced interconnects
C.-K. Hu, L. Gignac, et al.
International Workshop on Stress-Induced Phenomena in Metallization 2007
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
C.-K. Hu, L. Gignac, et al.
International Workshop on Stress-Induced Phenomena in Metallization 2007
A. Grill, S. Gates, et al.
IITC 2008
C.-K. Hu, L. Gignac, et al.
IITC 2002
K.P. Rodbell, E.G. Colgan, et al.
MRS Spring Meeting 1994