C.-K. Hu, L. Gignac, et al.
Applied Physics Letters
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
C.-K. Hu, L. Gignac, et al.
Applied Physics Letters
C.-K. Hu, B. Luther, et al.
Thin Solid Films
C.-K. Hu, S. Chang, et al.
VMIC 1985
L. Krusin-Elbaum, T. Shibauchi, et al.
Journal of Magnetism and Magnetic Materials