F. Fang, P.J. Stiles
Physical Review B
Paper
Effect of surface scattering on electron mobility in an inversion layer on p-type silicon
Abstract
No abstract available.
Related
F. Fang, A.B. Fowler
Journal of Applied Physics
W.E. Howard, F. Fang
Solid-State Electronics
G.A. Sai-Halasz, F. Fang, et al.
Applied Physics Letters