A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The far infrared radiation transmission of a highly doped InAs-GaSb superlattice as a function of the magnetic field, shows helicon wave propagation. The effective mass and the carrier density are determined from an analysis of the results as a function of frequency to be 0.082 ± 0.005m0 and 3.4 × 1018 cm-3. The carrier density is equal to that obtained from Hall measurements. The effective mass is significantly higher than the value expected from the InAs conduction band nonparabolicity (0.063m0). © 1982.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials