Alan Molinari, Federico Balduini, et al.
ACS Applied Electronic Materials
Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth. © 2013 AIP Publishing LLC.
Alan Molinari, Federico Balduini, et al.
ACS Applied Electronic Materials
Christian Lavoie, Praneet Adusumilli, et al.
ECS Meeting 2017 - New Orleans
Narender Rana, Yunlin Zhang, et al.
SPIE Advanced Lithography 2015
Kali Prasanna Mondal, Mengjia Gaowei, et al.
Scientific Reports