A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Paper
Electric field effect on superconducting YBa2Cu3O7-δ films
Abstract
MISFET-type structures have been developed that allow the application of electric fields larger than 4 × 106 V/cm into 100 Å thick, superconducting YBa2Cu3O7-δ channel layers. With these structures, t he carrier density and the electrical resistivity of YBa2Cu3O7-δ can be modified in the percent range by gate voltages of 50 V. © 1991.
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