E. Cartier, V. Narayanan, et al.
VLSI Technology 2004
Paper
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
Abstract
High-effective mobilities are demonstrated in Al2O3 based n-channel MOSFETs with Al gates. The Al2O3 was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximately 270 cm2/Vs, is found to approach that of SiO2 based MOSFETs at higher fields.
Related
E. Gusev, C. Cabral Jr., et al.
IEDM 2004
V. Narayanan, S. Guha, et al.
MRS Proceedings 2002
S. Guha, N.A. Bojarczuk, et al.
IEE/LEOS Summer Topical Meetings 1997