A. Gangulee, F.M. D'Heurle
Thin Solid Films
We obtained a measure for τR, the electron-hole recombination time in bismuth, from 2-20°K. The value of τR at 4.8°K is 6 × 10-9 sec and decreases exponentially as the temperature increases with an activation energy of 42°K. The results were obtained from measurements of the Acoustomagnetoelectric effect (AME) at 11.3 and 29.5 Mc. An ancillary result is a T-2 dependence for the trigonal hole mobility above 8°K. © 1966.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000