Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
We obtained a measure for τR, the electron-hole recombination time in bismuth, from 2-20°K. The value of τR at 4.8°K is 6 × 10-9 sec and decreases exponentially as the temperature increases with an activation energy of 42°K. The results were obtained from measurements of the Acoustomagnetoelectric effect (AME) at 11.3 and 29.5 Mc. An ancillary result is a T-2 dependence for the trigonal hole mobility above 8°K. © 1966.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Sung Ho Kim, Oun-Ho Park, et al.
Small
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Lawrence Suchow, Norman R. Stemple
JES