R.W. Gammon, E. Courtens, et al.
Physical Review B
We obtained a measure for τR, the electron-hole recombination time in bismuth, from 2-20°K. The value of τR at 4.8°K is 6 × 10-9 sec and decreases exponentially as the temperature increases with an activation energy of 42°K. The results were obtained from measurements of the Acoustomagnetoelectric effect (AME) at 11.3 and 29.5 Mc. An ancillary result is a T-2 dependence for the trigonal hole mobility above 8°K. © 1966.
R.W. Gammon, E. Courtens, et al.
Physical Review B
P. Alnot, D.J. Auerbach, et al.
Surface Science
J.H. Stathis, R. Bolam, et al.
INFOS 2005
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids