William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Amorphous carbon layer EPR measurements have been fitted to a model which predicts the critical fluences at which the layer forms for any temperature and ion species; it predicts the layer will not form during nitrogen ion implantation in diamond above 1031°K. A new anisotropic EPR spectrum labeled D‐A4 is observed after hot‐implantation (650°C) with nitrogen ions. It is thought to be a spin‐one‐center arising from a small D‐tensor interaction with 〈111〉 symmetry. Hot implantation suppresses the formation of the amorphous layer and enhances creation of crystalline lattice defects. Copyright © 1974 WILEY‐VCH Verlag GmbH & Co. KGaA
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
P. Alnot, D.J. Auerbach, et al.
Surface Science
Mark W. Dowley
Solid State Communications