Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Amorphous carbon layer EPR measurements have been fitted to a model which predicts the critical fluences at which the layer forms for any temperature and ion species; it predicts the layer will not form during nitrogen ion implantation in diamond above 1031°K. A new anisotropic EPR spectrum labeled D‐A4 is observed after hot‐implantation (650°C) with nitrogen ions. It is thought to be a spin‐one‐center arising from a small D‐tensor interaction with 〈111〉 symmetry. Hot implantation suppresses the formation of the amorphous layer and enhances creation of crystalline lattice defects. Copyright © 1974 WILEY‐VCH Verlag GmbH & Co. KGaA
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Revanth Kodoru, Atanu Saha, et al.
arXiv
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry